Study the Analysis of Low power and High speed CMOS Logic Circuits in 90nm Technology
نویسندگان
چکیده
This paper describes the parameter and characteristic analysis of Low power and High speed CMOS Logic Circuits in 90nm Technology. The proposed CMOS logic circuits consists only logic gates. CMOS circuit is fabricated in 0.12μm and 90nm CMOS technology. The supply voltage is 1.20V. The temperature was 27oC. We observed Inverter (NOT gate) properties MOS, Capacitance, Resistance, Inductance and Clock. These layouts can store in the form of semi-custom library to make fullcustom SoC designs.
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